| CPC H01L 29/86 (2013.01) [H10B 69/00 (2023.02); H10K 10/50 (2023.02); H10K 19/00 (2023.02); H10K 19/201 (2023.02)] | 20 Claims |
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1. A semiconductor device, comprising:
a first electrode;
a second electrode isolated from direct contact with the first electrode;
a ferroelectric layer;
a conductive metal oxide layer; and
a semiconductor layer,
wherein the ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer are between the first electrode and the second electrode, and
wherein the conductive metal oxide layer has a crystal structure having a (111) and/or (001) crystal direction.
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19. A semiconductor apparatus, comprising:
a stack structure in which a plurality of insulating layers and a plurality of first electrodes are alternately and repeatedly stacked in a vertical direction; and
a cell string including a ferroelectric layer, a conductive metal oxide layer, a semiconductor layer, and a second electrode,
wherein the cell string penetrates the stack structure in the vertical direction,
wherein, in the cell string, the ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer are between a first electrode of the plurality of first electrodes and the second electrode, and
wherein the conductive metal oxide layer has a crystal structure having a (111) and/or (001) crystal direction.
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