US 11,984,510 B2
Composite metal oxide semiconductor and thin-film transistor made therefrom and its application
Miao Xu, Guangzhou (CN); Hua Xu, Guangzhou (CN); Weijing Wu, Guangzhou (CN); Weifeng Chen, Guangzhou (CN); Lei Wang, Guangzhou (CN); and Junbiao Peng, Guangzhou (CN)
Assigned to South China University of Technology, Guangzhou (CN)
Filed by South China University of Technology, Guangzhou (CN)
Filed on Nov. 8, 2019, as Appl. No. 16/678,173.
Claims priority of application No. 201910881763.4 (CN), filed on Sep. 18, 2019.
Prior Publication US 2021/0083125 A1, Mar. 18, 2021
Int. Cl. H01L 29/786 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/78693 (2013.01) [H01L 29/247 (2013.01); H01L 29/6675 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A composite metal oxide semiconductor, characterized in that the composite oxide semiconductor is a rare-earth oxide doped metal oxide; wherein the metal oxide is indium gallium oxide or indium gallium zinc oxide; the rare-earth oxide is praseodymium oxide; a doping molar ratio of praseodymium to the indium and gallium or indium and gallium and zinc of the metal oxide is in a range from 0.10:1 to 0.4:1; there are recombination centers for photo-induced carriers in the composite metal oxide semiconductor, wherein when the metal oxide is indium gallium zinc oxide, a molar ratio of indium and gallium and zinc complies with the formulas In/(In+Zn)≥0.76 and 0<Ga/In≤0.8, and when the metal oxide is indium gallium oxide, a molar ratio of indium and gallium is in a range from 5:1 to 5:4, wherein the doping molar ratio of praseodymium to the indium and gallium or indium and gallium and zinc of the metal oxide is in a range from greater than 0.25:1 to less than or equal to 0.4:1.