an epitaxial layer of a first conductivity type;

a well region of a second conductivity type, the well region of the second conductivity type being within the epitaxial layer of the first conductivity type;

a source region of the first conductivity type, the source region of the first conductivity type being within the well region of the second conductivity type;

trench gate structure, the trench gate structure comprising a gate dielectric layer and a gate conductive layer, the trench gate structure being within the epitaxial layer of the first conductivity type and passing through the source region of the first conductivity type and the well region of the second conductivity type; and

contact structures, passing through the source region of the first conductivity type to be in mutual contact with the well region of the second conductivity type, and comprising a contact portion of the second conductivity type;

wherein the contact structures form a contact structure array, the contact structure array has a shared trench gate structure and different traversal gaps between an edge of the contact portion of the second conductivity type and an edge of a trench, and

wherein in the contact structure array, the doping concentration in the gap region of the second conductivity type decreases along with increment of the traversal gaps.