US 11,984,497 B2
Integration of a Schottky diode with a MOSFET
Nicolas Thierry-Jebali, Stockholm (SE); Hossein Elahipanah, Sollentuna (SE); Adolf Schoner, Hässelby (SE); and Sergey Reshanov, Upplands-Vasby (SE)
Assigned to II-VI ADVANCED MATERIALS, LLC, Pine Brook, NJ (US)
Filed by II-VI Delaware, Inc, Wilmington, DE (US)
Filed on Jan. 17, 2023, as Appl. No. 18/155,394.
Application 18/155,394 is a continuation of application No. 17/444,817, filed on Aug. 10, 2021, granted, now 11,581,431.
Application 17/444,817 is a continuation of application No. 16/647,186, filed on Mar. 13, 2020, granted, now 11,114,557, issued on Sep. 7, 2021.
Claims priority of application No. 1751139-5 (SE), filed on Sep. 15, 2017.
Prior Publication US 2023/0155019 A1, May 18, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/78 (2006.01); H01L 27/07 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/47 (2006.01); H01L 29/872 (2006.01)
CPC H01L 29/7803 (2013.01) [H01L 27/0727 (2013.01); H01L 29/0623 (2013.01); H01L 29/1095 (2013.01); H01L 29/47 (2013.01); H01L 29/7806 (2013.01); H01L 29/872 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a MOSFET device;
a Schottky diode device; and
a diode device,
wherein the Schottky diode device is connected in parallel to the MOSFET device, and
wherein the diode device is connected in parallel to the MOSFET device and the Schottky diode device.