US 11,984,484 B2
Semiconductor memory device
Tomonori Kajino, Yokkaichi (JP); Taichi Iwasaki, Yokkaichi (JP); Tatsuya Fujishima, Yokkaichi (JP); Masayuki Shishido, Yokkaichi (JP); and Nozomi Kido, Yokkaichi (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Sep. 9, 2021, as Appl. No. 17/470,982.
Claims priority of application No. 2021-049130 (JP), filed on Mar. 23, 2021.
Prior Publication US 2022/0310808 A1, Sep. 29, 2022
Int. Cl. H01L 29/417 (2006.01); G11C 16/04 (2006.01); H01L 29/423 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01); H01L 29/06 (2006.01)
CPC H01L 29/41775 (2013.01) [G11C 16/0483 (2013.01); H01L 29/42328 (2013.01); H01L 29/42344 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 43/35 (2023.02); H01L 29/0607 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor memory device comprising:
a substrate;
a source line provided above the substrate;
a plurality of word lines provided above the source line, the word lines being spaced apart from each other in a first direction intersecting a surface of the substrate;
a pillar provided to extend in the first direction, a bottom portion of the pillar reaching the source line, and each of intersection portions between the pillar and the word lines functioning as a memory cell; and
a first member provided to extend in the first direction and to penetrate the source line, the first member including a first portion which is far from the substrate, and a second portion which is near the substrate, wherein
the first member includes a first contact and a first insulating film, the first contact being provided to extend in the first direction from the first portion to the second portion, the first contact being electrically connected to the substrate, the first insulating film being provided continuously on a side surface portion of the first contact, and the first insulating film insulating the source line from the first contact, and
the first member includes a stepped portion at a boundary part between the first portion and the second portion.