US 11,984,481 B2
Laminate, semiconductor device, and method for manufacturing laminate
Hiroshi Hashigami, Annaka (JP)
Assigned to SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Filed by SHIN-ETSU CHEMICAL CO., LTD., Tokyo (JP)
Filed on Mar. 15, 2023, as Appl. No. 18/121,691.
Application 18/121,691 is a continuation of application No. 17/272,873, previously published as PCT/JP2019/035415, filed on Sep. 9, 2019.
Claims priority of application No. 2018-182714 (JP), filed on Sep. 27, 2018.
Prior Publication US 2023/0238432 A1, Jul. 27, 2023
Int. Cl. H01L 29/22 (2006.01); C01G 15/00 (2006.01); H01L 21/02 (2006.01); H01L 29/739 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/2206 (2013.01) [C01G 15/006 (2013.01); H01L 21/0242 (2013.01); H01L 21/02433 (2013.01); H01L 21/02483 (2013.01); H01L 21/02496 (2013.01); H01L 29/78 (2013.01); H01L 21/0262 (2013.01); H01L 29/7395 (2013.01); H01L 29/7786 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A mist-CVD apparatus comprising:
a first atomizer for atomizing a first metal oxide precursor and generating a first mist of the first metal oxide precursor;
a second atomizer for atomizing a second metal oxide precursor and generating a second mist of the second metal oxide precursor;
a carrier-gas supplier for supplying a carrier gas to convey the first and second mists;
a film-forming unit for forming a film on a substrate by subjecting the first and second mists to a thermal reaction; and
a first conveyance pipe through which the first mist and the carrier gas are conveyed to the film-forming unit,
a second conveyance pipe through which the second mist and the carrier gas are conveyed to the film-forming unit,
wherein at least one of (A)-(C) is true:
(A) the carrier-gas supplier is capable of adding silicon to the carrier gas,
(B) the first atomizer is capable of adding silicon to the first metal oxide precursor, and
(C) the first conveyance pipe is capable of adding silicon to the first mist and the carrier gas.