US 11,984,480 B2
Silicon carbide epitaxial substrate
Taro Enokizono, Osaka (JP); Tsutomu Hori, Osaka (JP); and Taro Nishiguchi, Osaka (JP)
Assigned to Sumitomo Electronic Industries, Ltd., Osaka (JP)
Appl. No. 17/270,230
Filed by SUMITOMO ELECTRIC INDUSTRIES, LTD., Osaka (JP)
PCT Filed Jun. 2, 2020, PCT No. PCT/JP2020/021744
§ 371(c)(1), (2) Date Feb. 22, 2021,
PCT Pub. No. WO2020/255698, PCT Pub. Date Dec. 24, 2020.
Claims priority of application No. 2019-113746 (JP), filed on Jun. 19, 2019.
Prior Publication US 2021/0328024 A1, Oct. 21, 2021
Int. Cl. H01L 29/16 (2006.01); C30B 29/36 (2006.01)
CPC H01L 29/1608 (2013.01) [C30B 29/36 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A silicon carbide epitaxial substrate comprising:
a silicon carbide substrate having a first main surface and a second main surface opposite to the first main surface;
a first silicon carbide epitaxial layer in contact with a whole of the first main surface; and
a second silicon carbide epitaxial layer in contact with a whole of the second main surface, wherein
a carrier concentration of the silicon carbide substrate is higher than a carrier concentration of each of the first silicon carbide epitaxial layer and the second silicon carbide epitaxial layer;
wherein the silicon carbide substrate does not comprise an epitaxial layer.