US 11,984,471 B2
Semiconductor device having a resistor and structure therefor
Arash Elhami Khorasani, Phoenix, AZ (US); and Mark Griswold, Gilbert, AZ (US)
Assigned to SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US)
Filed by SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Phoenix, AZ (US)
Filed on Sep. 20, 2021, as Appl. No. 17/479,066.
Application 17/479,066 is a continuation of application No. 16/447,005, filed on Jun. 20, 2019, granted, now 11,152,454.
Claims priority of provisional application 62/807,293, filed on Feb. 19, 2019.
Prior Publication US 2022/0005922 A1, Jan. 6, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/06 (2006.01); H01L 27/08 (2006.01); H01L 49/02 (2006.01)
CPC H01L 28/20 (2013.01) [H01L 27/0629 (2013.01); H01L 27/0676 (2013.01); H01L 27/0802 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device having a resistor element comprising:
a semiconductor substrate having a first conductivity type;
a first doped region of a second conductivity type on a first portion of the semiconductor substrate wherein the first doped region forms a drift region of a transistor;
an insulator overlying the first doped region; and
a resistor overlying the insulator, the resistor formed in a rectangular spiral shape having a plurality of revolutions, each revolution having sides and curved corners that connect the sides, the curved corners formed from a first semiconductor material having a first resistivity and the sides formed from a second semiconductor material having a second resistivity wherein the first resistivity is greater than the second resistivity wherein all parts of the curved corners are substantially devoid of the second semiconductor material.