| CPC H01L 27/14636 (2013.01) [H01L 25/0657 (2013.01); H01L 27/1462 (2013.01); H01L 27/14634 (2013.01); H10B 61/00 (2023.02)] | 19 Claims |
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1. An image sensor, comprising:
an upper chip including a pixel array and a first connecting structure, the first connecting structure being connected to the pixel array; and
a lower chip below the upper chip, the lower chip including:
a second connecting structure connected to the first connecting structure, the second connecting structure having:
a first metal layer,
a second metal layer on the first metal layer, the second metal layer having a same thickness as the first metal layer,
a third metal layer on the second metal layer, the third metal layer being thicker than the second metal layer,
a fourth metal layer on the third metal layer, the fourth metal layer being thicker than the third metal layer,
a first insulating layer between the first and second metal layers,
a second insulating layer between the second and third metal layers, and
a third insulating layer between the third and fourth metal layers,
a first memory device having a first magnetic tunnel junction (MTJ) element, the first MTJ element being in at least one of the first and second insulating layers, and
a second memory device having a second MTJ element different from the first MTJ element, the second MTJ element being in at least one of the first through third insulating layers,
wherein a single first memory device has a larger storage capacity than a single second memory device.
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