US 11,984,465 B2
Multiple deep trench isolation (MDTI) structure for CMOS image sensor
Wei Chuang Wu, Tainan (TW); Ching-Chun Wang, Tainan (TW); Dun-Nian Yaung, Taipei (TW); Feng-Chi Hung, Chu-Bei (TW); Jen-Cheng Liu, Hsin-Chu (TW); Yen-Ting Chiang, Tainan (TW); Chun-Yuan Chen, Tainan (TW); and Shen-Hui Hong, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Aug. 9, 2022, as Appl. No. 17/883,660.
Application 17/883,660 is a continuation of application No. 16/924,579, filed on Jul. 9, 2020, granted, now 11,495,630.
Application 16/924,579 is a continuation of application No. 16/661,136, filed on Oct. 23, 2019, granted, now 10,727,265, issued on Jul. 28, 2020.
Application 16/661,136 is a continuation of application No. 15/822,701, filed on Nov. 27, 2017, granted, now 10,461,109, issued on Oct. 29, 2019.
Prior Publication US 2022/0384495 A1, Dec. 1, 2022
Int. Cl. H01L 27/146 (2006.01); H04N 25/702 (2023.01); H04N 25/704 (2023.01); H04N 25/76 (2023.01)
CPC H01L 27/1463 (2013.01) [H01L 27/14605 (2013.01); H01L 27/14607 (2013.01); H01L 27/14612 (2013.01); H01L 27/14621 (2013.01); H01L 27/1464 (2013.01); H01L 27/14645 (2013.01); H01L 27/14685 (2013.01); H01L 27/14689 (2013.01); H04N 25/702 (2023.01); H04N 25/704 (2023.01); H04N 25/76 (2023.01); H01L 27/14627 (2013.01); H01L 27/14632 (2013.01); H01L 27/14636 (2013.01); H01L 27/14641 (2013.01); H01L 27/14687 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A CMOS image sensor, comprising:
a substrate having a front-side and a back-side opposite to the front-side;
a plurality of pixel regions respectively comprising a photodiode configured to receive radiation that enters the substrate from the back-side;
a boundary deep trench isolation (BDTI) structure disposed at boundary regions of the pixel regions surrounding the photodiode, the BDTI structure extending from the back-side of the substrate to a first depth within the substrate, wherein the BDTI structure has a ring shape from a top view, and two columns surrounding the photodiode with the first depth from a cross-sectional view; and
a multiple deep trench isolation (MDTI) structure disposed at inner regions of the pixel regions overlying the photodiode, the MDTI structure extending from the back-side of the substrate to a second depth within the substrate smaller than the first depth, the MDTI structure has three columns with the second depth between the two columns of the BDTI structure from the cross-sectional view; and
wherein the MDTI structure is a continuous integral unit having a ring shape.