	US 11,984,446 B2
	Semiconductor device with capacitors having different dielectric layer heights
Kyu Jin Choi, Gyeonggi-do (KR); Seong Min Ma, Gyeonggi-do (KR); and Kyu Chan Shim, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Dec. 29, 2021, as Appl. No. 17/565,248.
Claims priority of application No. 10-2021-0095796 (KR), filed on Jul. 21, 2021.
Prior Publication US 2023/0024352 A1, Jan. 26, 2023
Int. Cl. H01L 27/08 (2006.01); H01L 49/02 (2006.01)

CPC H01L 27/0805 (2013.01) [H01L 28/60 (2013.01)]

9 Claims

1. A semiconductor device comprising:

a first capacitor including a first lower electrode, a first upper electrode, and a first dielectric layer disposed between the first lower electrode and the first upper electrode at a first height; and

a second capacitor spaced apart from the first capacitor, the second capacitor including a second lower electrode, a second upper electrode, and a second dielectric layer disposed between the second lower electrode and the second upper electrode at a second height different from the first height,

wherein each of the first lower electrode and the second lower electrode comprises a first portion,

wherein the first portion of the first lower electrode and the first portion of the second lower electrode have the same cylindrical shape,

wherein the first portion of the first lower electrode is located at a different height than the first portion of the second lower electrode,

wherein the first lower electrode further includes a second portion downwardly extended from the first portion of the first lower electrode, and

wherein the first portion of the first lower electrode includes a closed lower surface and an opened upper surface and the first dielectric layer is disposed on the first portion of the first lower electrode.