US 11,984,443 B2
Power distribution network
Kam-Tou Sio, Zhubei (TW); Jiann-Tyng Tzeng, Hsinchu (TW); and Wei-Cheng Lin, Taichung (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 8, 2022, as Appl. No. 17/818,053.
Application 17/818,053 is a division of application No. 17/081,807, filed on Oct. 27, 2020, granted, now 11,444,073.
Prior Publication US 2022/0392885 A1, Dec. 8, 2022
Int. Cl. H01L 27/02 (2006.01); H01L 21/84 (2006.01); H01L 27/12 (2006.01); H03K 3/037 (2006.01); H01L 27/118 (2006.01)
CPC H01L 27/0207 (2013.01) [H01L 21/84 (2013.01); H01L 27/12 (2013.01); H03K 3/037 (2013.01); H01L 2027/11861 (2013.01); H01L 2027/11866 (2013.01); H01L 2027/11887 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a plurality of power rails in a first layer, wherein the plurality of power rails extend in a first direction and are separated from each other in a second direction;
forming a plurality of conductive lines in a second layer over the first layer, wherein the plurality of conductive lines extend in the second direction;
forming a plurality of active areas in a third layer over the second layer;
forming a plurality of conductive segments over the plurality of active areas in the third layer, wherein a first active area of the plurality of active areas is coupled to at least a first conductive line and a second conductive line of the plurality of conductive lines;
forming a plurality of gates above the plurality of active areas and interposed between the plurality of conductive segments;
forming a plurality of conductive traces in a fourth layer above the third layer, wherein the plurality of conductive traces extend in the second direction; and
forming a conductive pattern in a fifth layer above the fourth layer, wherein the conductive pattern is coupled to the plurality of conductive traces.