US 11,984,422 B2
Semiconductor package and method of forming same
Li-Hsien Huang, Zhubei (TW); Yao-Chun Chuang, Hsinchu (TW); SyuFong Li, Taoyuan (TW); Ching-Pin Lin, Hsinchu (TW); and Jun He, Zhubei (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Feb. 23, 2022, as Appl. No. 17/678,774.
Claims priority of provisional application 63/230,117, filed on Aug. 6, 2021.
Prior Publication US 2023/0045422 A1, Feb. 9, 2023
Int. Cl. H01L 21/683 (2006.01); H01L 21/66 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01)
CPC H01L 24/27 (2013.01) [H01L 21/6835 (2013.01); H01L 22/14 (2013.01); H01L 23/481 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/30 (2013.01); H01L 2224/0384 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/06515 (2013.01); H01L 2224/275 (2013.01); H01L 2224/30181 (2013.01); H01L 2924/30105 (2013.01); H01L 2924/35121 (2013.01); H01L 2924/37001 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method comprising:
attaching a first package component to a first carrier, the first package component comprising:
an aluminum pad disposed adjacent to a substrate;
a sacrificial pad disposed adjacent to the substrate, the sacrificial pad comprising a major surface opposite the substrate, a protrusion of the sacrificial pad extending from the major surface; and
a dielectric bond layer disposed around the aluminum pad and the sacrificial pad;
attaching a second carrier to the first package component and the first carrier, the first package component being interposed between the first carrier and the second carrier;
removing the first carrier;
planarizing the dielectric bond layer to comprise a top surface being coplanar with the protrusion; and
etching a portion of the protrusion.