US 11,984,406 B2
Semiconductor structure and method for manufacturing same
Yunsheng Xia, Hefei (CN); and Jen-Chou Huang, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Jul. 27, 2021, as Appl. No. 17/386,470.
Application 17/386,470 is a continuation of application No. PCT/CN2021/079803, filed on Mar. 9, 2021.
Claims priority of application No. 202010236043.5 (CN), filed on Mar. 30, 2020.
Prior Publication US 2021/0358858 A1, Nov. 18, 2021
Int. Cl. H01L 23/544 (2006.01); G03F 7/00 (2006.01); G03F 9/00 (2006.01); H01L 21/47 (2006.01)
CPC H01L 23/544 (2013.01) [G03F 7/70633 (2013.01); G03F 7/70683 (2013.01); G03F 9/7076 (2013.01); H01L 21/47 (2013.01); H01L 2223/54426 (2013.01); H01L 2223/54453 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a functional structure and a first mark structure located on a substrate, wherein the functional structure and the first mark structure have a same feature size and a same pattern shape; and
a first dielectric layer located at the functional structure and the first mark structure, wherein a thickness of the first dielectric layer at the functional structure is different from a thickness of the first dielectric layer at the first mark structure; and
wherein the functional structure and the first mark structure comprise a plurality of saw-toothed grooves, each of the saw-toothed grooves is filled with the first dielectric layer, and a height of the first dielectric layer filling in each of the saw-toothed grooves of the functional structure is different from a height of the first dielectric layer filling in each of the saw-toothed grooves of the first mark structure.