US 11,984,394 B2
Semiconductor memory device having contact plugs extend in the stacking direction of the plurality of the first and second conductive layers
Keisuke Nakatsuka, Kobe (JP); Yasuhito Yoshimizu, Yokkaichi (JP); Tomoya Sanuki, Yokkaichi (JP); and Fumitaka Arai, Yokkaichi (JP)
Assigned to Kioxia Corporation, Minato-ku (JP)
Appl. No. 17/438,728
Filed by Kioxia Corporation, Minato-ku (JP)
PCT Filed Mar. 19, 2019, PCT No. PCT/JP2019/011585
§ 371(c)(1), (2) Date Sep. 13, 2021,
PCT Pub. No. WO2020/188775, PCT Pub. Date Sep. 24, 2020.
Prior Publication US 2022/0130754 A1, Apr. 28, 2022
Int. Cl. H10B 41/27 (2023.01); H01L 23/522 (2006.01); H01L 23/535 (2006.01); H10B 43/27 (2023.01)
CPC H01L 23/5226 (2013.01) [H01L 23/535 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02)] 5 Claims
OG exemplary drawing
 
1. A semiconductor memory device comprising:
a plurality of first conductive layers stacked on a substrate;
a plurality of second conductive layers each stacked between the first conductive layers;
a pillar that extends in a stacking direction of the plurality of first conductive layers and the plurality of second conductive layers and forms a plurality of memory cells at intersections of the plurality of first conductive layers and the plurality of second conductive layers in a region where the plurality of first conductive layers and the plurality of second conductive layers are arranged;
a first contact plug that extends in the stacking direction of the plurality of first conductive layers and the plurality of second conductive layers and is connected to the plurality of first conductive layers in the region where the plurality of first conductive layers and the plurality of second conductive layers are arranged; and
a second contact plug that extends in the stacking direction of the plurality of first conductive layers and the plurality of second conductive layers and is connected to the plurality of second conductive layers in the region where the plurality of first conductive layers and the plurality of second conductive layers are arranged.