US 11,984,382 B2
Memory device with low density thermal barrier
Pengyuan Zheng, Boise, ID (US); David Ross Economy, Boise, ID (US); Yongjun J. Hu, Boise, ID (US); Kent H. Zhuang, Boise, ID (US); and Robert K. Grubbs, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Oct. 1, 2021, as Appl. No. 17/492,185.
Application 17/492,185 is a division of application No. 16/400,956, filed on May 1, 2019, granted, now 11,158,561.
Prior Publication US 2022/0020662 A1, Jan. 20, 2022
Int. Cl. H01L 23/373 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01); H01L 23/535 (2006.01)
CPC H01L 23/3736 (2013.01) [H01L 21/02186 (2013.01); H01L 21/0234 (2013.01); H01L 21/768 (2013.01); H01L 23/535 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A memory device, comprising:
a first access line configured to communicate with a cell component of a memory array of cell components of the memory device, the first access line being of a plurality of first access lines of the memory device configured to access the memory array of cell components;
a first barrier material positioned between the cell component and the first access line, the first barrier material having a first density and configured to thermally insulate the cell component; and
a second barrier material positioned between the cell component and a second access line configured to communicate with the cell component and of a plurality of second access lines of the memory device configured to access the memory array of cell components, the second barrier material having a second density different than the first density and configured to thermally insulate the cell component, wherein the second density is different than the first density based at least in part on a modified portion of the first barrier material resulting from applying a first plasma to the first barrier material.