US 11,984,319 B2
Substrate processing method and film forming system
Kensaku Narushima, Nirasaki (JP); Nagayasu Hiramatsu, Hillsboro, OR (US); Takanobu Hotta, Nirasaki (JP); Atsushi Matsumoto, Nirasaki (JP); Masato Araki, Nirasaki (JP); and Hideaki Yamasaki, Nirasaki (JP)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed on Feb. 6, 2020, as Appl. No. 16/783,530.
Claims priority of application No. 2019-022087 (JP), filed on Feb. 8, 2019.
Prior Publication US 2020/0258747 A1, Aug. 13, 2020
Int. Cl. H01L 21/285 (2006.01); C09K 13/08 (2006.01); C23C 16/06 (2006.01); C23C 16/455 (2006.01); C23C 16/46 (2006.01); H01L 21/306 (2006.01); H01L 21/3213 (2006.01); H01L 21/324 (2006.01); H01L 21/67 (2006.01)
CPC H01L 21/28556 (2013.01) [C09K 13/08 (2013.01); C23C 16/06 (2013.01); C23C 16/45525 (2013.01); C23C 16/46 (2013.01); H01L 21/30604 (2013.01); H01L 21/32133 (2013.01); H01L 21/324 (2013.01); H01L 21/67063 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A method of processing a substrate, the method comprising:
providing the substrate on which a natural oxide film is formed;
performing a pre-processing on the substrate such that the natural oxide film formed on the substrate is removed; and
directly forming a metal film on the substrate by heating a stage on which the substrate is mounted to a predetermined temperature and supplying a metal halide gas comprising a combination of a metal atom from a group of Ta, Co, Ni, Mo, Hf, and Zr and a halogen element from a group of Cl, Br, and I, and a reduction gas to the substrate which has been subjected to the pre-processing,
wherein the performing the pre-processing includes:
exposing, in a first pre-processing step, the substrate to a mixture gas forming a hydrogen termination, halogen termination, or null termination on a surface of the substrate where the natural oxide film is removed; and
removing a reaction product generated from a reaction of the natural oxide film and the mixture gas, and deposited on the substrate, by heating the substrate to sublimate the reaction product from the substrate in a second pre-processing step,
wherein the forming the metal film includes alternately:
supplying the metal halide gas together with the reduction gas; and
supplying the reduction gas without supplying the metal halide gas,
wherein the substrate comprises the surface with the halogen termination, and
wherein the forming the metal film further includes forming a site for the metal atom to be adsorbed on the surface from which the halogen element from the halogen termination is desorbed.