an electrostatic chuck disposed in a chamber in which a plasma etching process including a first operation and a second operation after the first operation is performed, and including a base layer, a bonding layer disposed on the base layer, and an adsorption layer including a plurality of protrusions disposed on the bonding layer and contacting a lower surface of a substrate to be subjected to the plasma etching process;

a plurality of pipes configured to supply coolant to adjust a temperature of the electrostatic chuck, to the base layer;

a cooling device configured to supply the coolant circulating in a first direction from an edge to a center of the electrostatic chuck during the first operation, and configured to supply the coolant to the electrostatic chuck during the second operation; and

a controller configured to control a valve connected to the plurality of pipes and the cooling device to determine a circulation of the coolant,

wherein when the controller controls the valve to cause the coolant to circulate in the first direction during the first operation, the electrostatic chuck is configured to reach a first temperature between about −40° C. and −5° C., and

wherein when the controller controls the valve to cause the coolant to circulate in a second direction during the second operation, the electrostatic chuck is configured to reach a second temperature between about 30° C. and 90° C.