US 11,984,261 B2
Integration scheme for breakdown voltage enhancement of a piezoelectric metal-insulator-metal device
Anderson Lin, Hsinchu (TW); Chun-Ren Cheng, Hsin-Chu (TW); Chi-Yuan Shih, Hsinchu (TW); Shih-Fen Huang, Jhubei (TW); Yi-Chuan Teng, Zhubei (TW); Yi Heng Tsai, Hsinchu (TW); You-Ru Lin, New Taipei (TW); Yen-Wen Chen, Hsinchu County (TW); Fu-Chun Huang, Zhubei (TW); Fan Hu, Taipei (TW); Ching-Hui Lin, Taichung (TW); and Yan-Jie Liao, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Aug. 25, 2021, as Appl. No. 17/411,416.
Application 17/411,416 is a continuation of application No. 16/417,797, filed on May 21, 2019, granted, now 11,107,630.
Claims priority of provisional application 62/736,734, filed on Sep. 26, 2018.
Prior Publication US 2021/0383972 A1, Dec. 9, 2021
Int. Cl. H01G 4/012 (2006.01); H01G 4/12 (2006.01); H01G 4/228 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 41/047 (2006.01); H01L 41/083 (2006.01); H01L 41/113 (2006.01); H01L 49/02 (2006.01); H10N 30/30 (2023.01); H10N 30/50 (2023.01); H10N 30/87 (2023.01)
CPC H01G 4/012 (2013.01) [H01G 4/12 (2013.01); H01G 4/228 (2013.01); H01L 21/31111 (2013.01); H01L 21/32139 (2013.01); H01L 28/60 (2013.01); H10N 30/302 (2023.02); H10N 30/501 (2023.02); H10N 30/508 (2023.02); H10N 30/872 (2023.02)] 20 Claims
OG exemplary drawing
 
1. An integrated chip comprising:
a first electrode;
a second electrode over the first electrode;
a dielectric structure sandwiched between the first electrode and the second electrode; and
a passivation layer over the second electrode and the dielectric structure, wherein the passivation layer comprises a first horizontal surface and a second horizontal surface vertically below a top surface of the passivation layer, wherein the first and second horizontal surfaces are disposed above a top surface of the dielectric structure and below a top surface of the second electrode, wherein outermost opposing sidewalls of the second electrode are spaced laterally between the first and second horizontal surfaces.