US 11,984,182 B2
Repair system and repair method for semiconductor structure, storage medium and electronic device
Zhi Yang, Hefei (CN); and Tao Huang, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Jun. 10, 2022, as Appl. No. 17/837,203.
Application 17/837,203 is a continuation of application No. PCT/CN2022/080713, filed on Mar. 14, 2022.
Claims priority of application No. 202210226732.7 (CN), filed on Mar. 9, 2022.
Prior Publication US 2023/0290424 A1, Sep. 14, 2023
Int. Cl. G11C 11/00 (2006.01); G11C 29/00 (2006.01); G11C 29/12 (2006.01); G11C 29/44 (2006.01); G11C 29/52 (2006.01)
CPC G11C 29/4401 (2013.01) [G11C 29/1201 (2013.01); G11C 29/52 (2013.01); G11C 29/789 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A repair system for a semiconductor structure, wherein the semiconductor structure comprises a main memory area and a redundant memory area, and the repair system comprises:
a test circuit, configured to perform defect detection on the main memory area to determine a failed cell of the main memory area and position information of the failed cell;
a control circuit, connected to the test circuit, and configured to store the position information of the failed cell and generate a repair signal according to the position information; and
a repair circuit, connected to the control circuit, and configured to receive the repair signal and perform a repair operation on the failed cell through the redundant memory area;
wherein the repair circuit is further configured to detect a repair state of the failed cell, and the repair state comprises repaired and unrepaired.