US 11,983,084 B2
Controlling cooling performance of thermoelectric element of storage device and number of channels or ways in storage device in response to temperature changes
Jaebeom Byun, Suwon-si (KR); and Eoksoo Shim, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Nov. 19, 2021, as Appl. No. 17/531,204.
Claims priority of application No. 10-2021-0019704 (KR), filed on Feb. 15, 2021.
Prior Publication US 2022/0261326 A1, Aug. 18, 2022
Int. Cl. G06F 1/26 (2006.01); G06F 1/20 (2006.01); G06F 11/30 (2006.01); G06F 11/34 (2006.01)
CPC G06F 11/3058 (2013.01) [G06F 1/206 (2013.01); G06F 11/3034 (2013.01); G06F 11/3409 (2013.01)] 17 Claims
OG exemplary drawing
 
10. A storage device comprising:
a temperature sensor configured to identify a first increase of a temperature of the storage device from a first temperature to a second temperature, a second increase of the temperature of the storage device from the second temperature to a third temperature, and a third increase of the temperature of the storage device from the third temperature to a fourth temperature;
a thermoelectric element configured to perform a cooling operation for the storage device;
a thermoelectric element controller configured to:
control a cooling performance of the cooling operation of the thermoelectric element in response to the first increase of the temperature of the storage device by increasing an operating voltage of the thermoelectric element from a first voltage level to a second voltage level, and
control the cooling performance of the thermoelectric element in response to the third increase of the temperature of the storage device by increasing the operating voltage of the thermoelectric element from the second voltage level to a third voltage level; and
a storage controller configured to control a number of active channels or active ways of the storage device in response to the second increase of the temperature of the storage device by deactivating a first active channel or a first active way of the storage device.