US 11,982,980 B2
Simulation method for semiconductor fabrication process and method for manufacturing semiconductor device
Jinwoo Kim, Hwaseong-si (KR); Sanghoon Myung, Goyang-si (KR); Wonik Jang, Suwon-si (KR); Yongwoo Jeon, Seoul (KR); Kanghyun Baek, Seoul (KR); Jisu Ryu, Hwaseong-si (KR); and Changwook Jeong, Hwaseong-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Apr. 14, 2021, as Appl. No. 17/230,275.
Claims priority of application No. 10-2020-0100042 (KR), filed on Aug. 10, 2020.
Prior Publication US 2022/0043405 A1, Feb. 10, 2022
Int. Cl. G05B 13/04 (2006.01); G05B 13/02 (2006.01); G06N 3/045 (2023.01); H01L 27/02 (2006.01)
CPC G05B 13/042 (2013.01) [G05B 13/027 (2013.01); G06N 3/045 (2023.01); H01L 27/0207 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A simulation method for a semiconductor fabrication process, comprising:
obtaining, as input data, process parameters for controlling a semiconductor process of manufacturing semiconductor devices and design parameters representing a structure of the semiconductor devices;
generating predictive data for electrical characteristics of the semiconductor devices using a machine learning model based on the input data;
generating reference data for the electrical characteristics of the semiconductor devices using a simulation tool based on the input data;
training the machine learning model using the predictive data and the reference data, wherein the machine learning model comprises a first machine learning model configured to receive the process parameters and to output the design parameters representing a structure of the semiconductor devices, and a second machine learning model configured to receive the design parameters and to output the predictive data;
performing the semiconductor fabrication process using the output of the first machine learning model and the output of the second machine learning model.