CPC G01T 1/248 (2013.01) [G01T 1/247 (2013.01); H01L 27/1463 (2013.01); H01L 27/14636 (2013.01); H01L 27/14658 (2013.01); H01L 31/02027 (2013.01); H01L 31/107 (2013.01)] | 20 Claims |
1. A semiconductor device comprising:
a substrate;
a first single-photon avalanche diode in the substrate;
a second single-photon avalanche diode in the substrate;
a first isolation structure formed between the first and second single-photon avalanche diodes; and
a second isolation structure that is different from the first isolation structure formed around a periphery of the first and second single-photon avalanche diodes.
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