US 11,982,707 B2
Semiconductor device
Junsik Park, Suwon-si (KR); Heesu Kim, Suwon-si (KR); Bonggyu Kang, Yongin-si (KR); Youngmin Ku, Seongnam-si (KR); and Namsu Kim, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Jul. 26, 2022, as Appl. No. 17/873,385.
Claims priority of application No. 10-2021-0148922 (KR), filed on Nov. 2, 2021.
Prior Publication US 2023/0133288 A1, May 4, 2023
Int. Cl. G01R 31/28 (2006.01); G01R 27/26 (2006.01); H05K 1/18 (2006.01)
CPC G01R 31/2884 (2013.01) [G01R 27/2611 (2013.01); G01R 31/2879 (2013.01); H05K 1/181 (2013.01); H05K 2201/1003 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
an internal circuit connected to at least one pad;
a first inductor element connected between the at least one pad and the internal circuit;
a second inductor element inductively coupled to the first inductor element, and configured to generate an induced voltage due to an overcurrent flowing in the first inductor element; and
an event detection circuit including a monitoring element connected to the second inductor element, and configured to generate an event detection signal by sensing changes in properties of the monitoring element caused by permanent damage caused by the induced voltage across the second inductor element.