US 11,982,555 B2
Thermal sensor device
Hiroshi Nakano, Tokyo (JP); Masahiro Matsumoto, Tokyo (JP); Yasuo Onose, Hitachinaka (JP); and Kazuhiro Ohta, Hitachinaka (JP)
Assigned to HITACHI ASTEMO, LTD., Ibaraki (JP)
Appl. No. 17/607,441
Filed by Hitachi Astemo, Ltd., Hitachinaka (JP)
PCT Filed Jun. 9, 2020, PCT No. PCT/JP2020/022619
§ 371(c)(1), (2) Date Oct. 29, 2021,
PCT Pub. No. WO2020/255788, PCT Pub. Date Dec. 24, 2020.
Claims priority of application No. 2019-111695 (JP), filed on Jun. 17, 2019.
Prior Publication US 2022/0214197 A1, Jul. 7, 2022
Int. Cl. G01F 1/692 (2006.01); G01N 27/18 (2006.01)
CPC G01F 1/692 (2013.01) [G01N 27/18 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A thermal sensor device comprising:
a substrate having an opening; and
a diaphragm having a structure in which a lower stacked film, a heat generating resistor, and an upper stacked film are stacked so as to bridge the opening,
wherein a film thickness of the lower stacked film is larger than a film thickness of the upper stacked film, an average thermal expansion coefficient of the lower stacked film is larger than an average thermal expansion coefficient of the upper stacked film,
the lower stacked film includes a plurality of films having different thermal expansion coefficients, and
a film having a largest thermal expansion coefficient among the plurality of films is formed below a thickness center of the lower stacked film.