US 11,982,018 B2
Semiconductor nanocrystal particles of core-shell structure having specific bandgap relationship between the core and the shells, production methods thereof, and devices including the same
Jin A Kim, Suwon-si (KR); Yuho Won, Seoul (KR); Sung Woo Kim, Hwaseong-si (KR); Tae Hyung Kim, Seoul (KR); Jeong Hee Lee, Seongnam-si (KR); and Eun Joo Jang, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Nov. 4, 2022, as Appl. No. 18/052,597.
Application 18/052,597 is a continuation of application No. 16/281,232, filed on Feb. 21, 2019, granted, now 11,566,345.
Claims priority of application No. 10-2018-0020799 (KR), filed on Feb. 21, 2018.
Prior Publication US 2023/0093467 A1, Mar. 23, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. C30B 29/40 (2006.01); C01G 9/08 (2006.01); C09K 11/02 (2006.01); C09K 11/56 (2006.01); C09K 11/88 (2006.01); C30B 29/48 (2006.01); H01L 33/06 (2010.01); H01L 33/28 (2010.01); H10K 50/115 (2023.01); B82Y 20/00 (2011.01); B82Y 40/00 (2011.01)
CPC C30B 29/48 (2013.01) [C01G 9/08 (2013.01); C09K 11/02 (2013.01); C09K 11/565 (2013.01); C09K 11/883 (2013.01); H01L 33/06 (2013.01); H01L 33/28 (2013.01); H10K 50/115 (2023.02); B82Y 20/00 (2013.01); B82Y 40/00 (2013.01); C01P 2002/85 (2013.01); C01P 2004/04 (2013.01); C01P 2004/64 (2013.01)] 19 Claims
OG exemplary drawing
 
1. Semiconductor nanocrystal particles comprising:
a core comprising a first semiconductor nanocrystal,
a first shell disposed on the core, the first shell comprising a second semiconductor nanocrystal that has a different composition from the first semiconductor nanocrystal, and
a second shell disposed on the first shell, the second shell comprising a third semiconductor nanocrystal that has a different composition from the second semiconductor nanocrystal,
wherein the first semiconductor nanocrystal comprises a Group II-VI compound comprising zinc;
wherein the second semiconductor nanocrystal comprises zinc and selenium;
wherein the third semiconductor nanocrystal comprises zinc and sulfur;
wherein an energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the first semiconductor nanocrystal, and the energy bandgap of the second semiconductor nanocrystal is less than an energy bandgap of the third semiconductor nanocrystal;
wherein the semiconductor nanocrystal particles do not comprise cadmium;
wherein the semiconductor nanocrystal particles are configured to emit light having a maximum luminescent peak wavelength in a range between about 400 nanometers and 550 nanometers,
wherein the semiconductor nanocrystal particles are configured to exhibit a quantum efficiency of greater than or equal to about 60%, and
wherein an average size of the semiconductor nanocrystal particles is less than or equal to about 50 nanometers.