	US 11,982,017 B2
	Transparent conductive oxide thin film and use thereof
Ruyi Zhang, Ningbo (CN); Yanwei Cao, Ningbo (CN); Yang Song, Ningbo (CN); Shaoqin Peng, Ningbo (CN); and Jiachang Bi, Ningbo (CN)
Assigned to NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING, CHINESE ACADEMY OF SCIENCES, Ningbo (CN)
Appl. No. 18/037,565
Filed by NINGBO INSTITUTE OF MATERIALS TECHNOLOGY AND ENGINEERING, CHINESE ACADEMY OF SCIENCES, Ningbo (CN)
PCT Filed Jun. 11, 2021, PCT No. PCT/CN2021/099601 § 371(c)(1), (2) Date May 18, 2023, PCT Pub. No. WO2022/105203, PCT Pub. Date May 27, 2022.
Claims priority of application No. 202011297238.7 (CN), filed on Nov. 19, 2020.
Prior Publication US 2024/0003051 A1, Jan. 4, 2024
Int. Cl. C23C 14/08 (2006.01); C30B 23/02 (2006.01); C30B 23/06 (2006.01); C30B 29/22 (2006.01); H01J 37/34 (2006.01)

CPC C30B 29/22 (2013.01) [C23C 14/08 (2013.01); C23C 14/082 (2013.01); C23C 14/086 (2013.01); C30B 23/025 (2013.01); C30B 23/063 (2013.01); H01J 37/3405 (2013.01); H01J 37/3426 (2013.01); H01J 2237/332 (2013.01)]

5 Claims

1. A method for fabricating a transparent conductive oxide thin film, comprising the following steps:

fabricating Ba_1-xLa_xSnO₃(BLSO) using a solid-phase reaction method to obtain a BLSO magnetron sputtering target material; and

fabricating a BLSO thin film by deposition with argon as a sputtering gas by using a SrTiO₃, MgO, LaAlO₃, (La,Sr)(Al,Ta)O₃(LSAT), MgAl₂O₄or Al₂O₃single crystal substrate and the BLSO magnetron sputtering target material, such that the transparent conductive oxide thin film is prepared; wherein the temperature of the substrate is 750° C.-950° C., and the deposition pressure of the Ar gas is 25-77 Pa while sputtering.