US 11,982,016 B2
Method for growing beta-Ga2O3-based single crystal film, and crystalline layered structure
Ken Goto, Tokyo (JP); Kohei Sasaki, Tokyo (JP); Akinori Koukitu, Tokyo (JP); Yoshinao Kumagai, Tokyo (JP); and Hisashi Murakami, Tokyo (JP)
Assigned to Tamura Corporation, Tokyo (JP); and National University Corporation Tokyo University of Agriculture and Technology, Tokyo (JP)
Filed by TAMURA CORPORATION, Tokyo (JP); and NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY, Tokyo (JP)
Filed on Sep. 10, 2021, as Appl. No. 17/471,395.
Application 17/471,395 is a continuation of application No. 15/025,956, abandoned, previously published as PCT/JP2014/074659, filed on Sep. 18, 2014.
Claims priority of application No. 2013-203198 (JP), filed on Sep. 30, 2013; and application No. 2014-088589 (JP), filed on Apr. 22, 2014.
Prior Publication US 2021/0404086 A1, Dec. 30, 2021
Int. Cl. C30B 25/16 (2006.01); C23C 16/40 (2006.01); C23C 16/448 (2006.01); C30B 25/02 (2006.01); C30B 29/16 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01); H01L 29/24 (2006.01)
CPC C30B 25/165 (2013.01) [C23C 16/40 (2013.01); C23C 16/4488 (2013.01); C30B 25/02 (2013.01); C30B 29/16 (2013.01); H01L 21/02414 (2013.01); H01L 21/02433 (2013.01); H01L 21/02565 (2013.01); H01L 21/02576 (2013.01); H01L 21/0259 (2013.01); H01L 21/02598 (2013.01); H01L 21/0262 (2013.01); H01L 21/02634 (2013.01); H01L 29/04 (2013.01); H01L 29/24 (2013.01)] 5 Claims
 
1. A method for growing a β-Ga2O3-based single crystal film on a Ga2O3-based substrate comprising the steps of:
producing a gallium chloride-based gas by reacting a metal gallium source with a Cl-including gas consisting of Cl2 in a reaction region R1 of a reaction chamber, the gallium chloride-based gas includes a GaCl gas containing the highest partial pressure among component gases of the gallium chloride-based gas produced by the reaction in the reaction region R1, the highest partial pressure being between 10−2 and 10−3 atm,
mixing the gallium chloride-based gas with an oxygen-including gas consisting of O2 not containing hydrogen in a crystal growth region R2 next to the reaction region R1,
exposing the Ga2O3-based substrate to a mixed gas comprising the gallium chloride-based gas and the oxygen-including gas in the crystal growth region R2; and
growing a β-Ga2O3-based single crystal film epitaxially on a principal surface of the Ga2O3-based substrate at a growth temperature of 900° C. to 1050° C.,
wherein the gallium chloride-based gas and the oxygen-including gas are carried in the crystal growth region R2 by an inert gas selected from the group consisting of N2, Ar, and He,
wherein the β-Ga2O3-based single crystal film is epitaxially grown on the principal surface of the Ga2O3-based substrate in a state that a ratio of a supplied partial pressure of the O2 gas to a supplied partial pressure of the gallium chloride-based gas in the crystal growth region R2 is not less than 5 and not more than 10,
wherein the residual carrier concentration, which is a difference between a donor concentration Nd and an acceptor concentration Na, in the β-Ga2O3-based single crystal film is not more than 1=1013 atoms/cm3, and
wherein the principal surface of the Ga2O3-based substrate has a plane orientation of (001).