US 11,981,998 B2
Systems and methods for substrate support temperature control
Zubin Huang, Santa Clara, CA (US); Rui Cheng, San Jose, CA (US); and Jian Li, Fremont, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Oct. 30, 2020, as Appl. No. 17/085,255.
Claims priority of provisional application 62/930,249, filed on Nov. 4, 2019.
Prior Publication US 2021/0130960 A1, May 6, 2021
Int. Cl. C23C 16/46 (2006.01); C23C 16/455 (2006.01); C23C 16/458 (2006.01); H01J 37/32 (2006.01)
CPC C23C 16/466 (2013.01) [C23C 16/45563 (2013.01); C23C 16/4581 (2013.01); H01J 37/32724 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A temperature modulation method for a semiconductor substrate support comprising:
delivering a gas through a purge line extending within a semiconductor substrate support, the gas directed to a backside surface of the semiconductor substrate support opposite a semiconductor substrate support surface, wherein the purge line extends along a central axis of a shaft, wherein the shaft is hermetically sealed with the semiconductor substrate support, wherein the semiconductor substrate support is characterized by a center and a circumferential edge, and wherein a first end of the purge line is fixed at a first distance from the backside surface of the semiconductor substrate support; and
flowing the gas convectively at a first flow rate via a flow pathway to remove heat from the semiconductor substrate support to achieve a desired semiconductor substrate support temperature profile.