US 11,981,996 B2
Moisture governed growth method of atomic layer ribbons and nanoribbons of transition metal dichalcogenides
Avetik R. Harutyunyan, Santa Clara, CA (US); and Xufan Li, Dublin, OH (US)
Assigned to HONDA MOTOR CO., LTD., Tokyo (JP)
Filed by HONDA MOTOR CO., LTD., Tokyo (JP)
Filed on Nov. 2, 2022, as Appl. No. 18/051,962.
Application 18/051,962 is a division of application No. 17/148,129, filed on Jan. 13, 2021, granted, now 11,519,068.
Application 17/148,129 is a continuation in part of application No. 16/912,077, filed on Jun. 25, 2020, granted, now 11,408,073, issued on Aug. 9, 2022.
Claims priority of provisional application 63/011,075, filed on Apr. 16, 2020.
Prior Publication US 2023/0141275 A1, May 11, 2023
Int. Cl. C01G 39/06 (2006.01); B82Y 30/00 (2011.01); C01G 49/00 (2006.01); C01G 53/11 (2006.01); C23C 16/44 (2006.01); C23C 16/448 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); B82Y 40/00 (2011.01)
CPC C23C 16/45529 (2013.01) [C01G 39/06 (2013.01); C01G 49/00 (2013.01); C01G 53/11 (2013.01); C23C 16/4402 (2013.01); C23C 16/4482 (2013.01); C23C 16/45553 (2013.01); C23C 16/56 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C01P 2004/17 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A double atomic layer ribbon comprising a first monolayer, a second monolayer on a surface of the first monolayer, and a metal-containing nanoparticle at an end of the second monolayer,
wherein the double atomic layer ribbon is formed by subjecting two or more precursor powders to a moisturized gas flow at a temperature sufficient to deposit the double atomic layer ribbon on a substrate via chemical vapor deposition,
wherein the first monolayer has a first average width and the second monolayer has a second average width that is less than the first average width, and
wherein the first monolayer comprises a first transition metal dichalcogenide material having a first transition metal and a first dichalcogenide, and the second monolayer comprises a second transition metal dichalcogenide material having a second transition metal and a second dichalcogenide.