	US 11,981,880 B2
	Cleaning composition and cleaning method for component of semiconductor manufacturing process chamber
Isao Hirano, Kawasaki (JP); and Yasuo Suzuki, Kawasaki (JP)
Assigned to TOKYO OHKA KOGYO CO., LTD., Kanagawa (JP)
Filed by TOKYO OHKA KOGYO CO., LTD., Kanagawa (JP)
Filed on Oct. 27, 2021, as Appl. No. 17/512,097.
Claims priority of application No. 2020-183858 (JP), filed on Nov. 2, 2020.
Prior Publication US 2022/0135916 A1, May 5, 2022
Int. Cl. C11D 3/39 (2006.01); C11D 1/00 (2006.01); C11D 1/22 (2006.01); C11D 3/00 (2006.01); C11D 3/04 (2006.01); C11D 3/10 (2006.01); C11D 3/20 (2006.01); C11D 3/28 (2006.01); C11D 3/395 (2006.01)

CPC C11D 1/22 (2013.01) [C11D 1/00 (2013.01); C11D 3/0094 (2013.01); C11D 3/04 (2013.01); C11D 3/10 (2013.01); C11D 3/2075 (2013.01); C11D 3/2079 (2013.01); C11D 3/2082 (2013.01); C11D 3/2086 (2013.01); C11D 3/28 (2013.01); C11D 3/3902 (2013.01); C11D 3/3942 (2013.01); C11D 2111/22 (2024.01)]

6 Claims

1. A cleaning composition for a component of a semiconductor manufacturing process chamber comprising:

5% to 10% by mass of peroxide;

5% to 10% by mass of an ammonium salt; and

1% to 20% by mass of an acid having an acid dissociation constant (pKa) of 1 or more at 25° C.; and

water as a solvent,

wherein a value of (Number of moles of the acid contained in the cleaning composition×Acid valence of the acid)/(Number of moles of the ammonium salt contained in the cleaning composition×Base valence of the ammonium salt) is 0.2 or more and 1.0 or less,

wherein the solvent does not contain an organic solvent, and

wherein the cleaning composition has a pH of 7.6 to 9.