US 11,981,848 B2
Quantum dots and electronic device including the same
Sung Jun Park, Hwaseong-si (KR); Junghwa Kim, Yongin-si (KR); Tae Gon Kim, Hwaseong-si (KR); Taekhoon Kim, Hwaseong-si (KR); Young Mo Sung, Suwon-si (KR); Nayoun Won, Yongin-si (KR); Dongjin Yun, Pohang-si (KR); Mi Hye Lim, Suwon-si (KR); Shin Ae Jun, Seongnam-si (KR); and Hyeonsu Heo, Uijeongbu-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Apr. 23, 2021, as Appl. No. 17/238,538.
Claims priority of application No. 10-2020-0059375 (KR), filed on May 18, 2020.
Prior Publication US 2021/0355380 A1, Nov. 18, 2021
Int. Cl. C09K 11/56 (2006.01); B82Y 20/00 (2011.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); H10K 50/115 (2023.01)
CPC C09K 11/565 (2013.01) [B82Y 20/00 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); H10K 50/115 (2023.02)] 23 Claims
OG exemplary drawing
 
1. A quantum dot, comprising
a semiconductor nanocrystal core comprising indium and phosphorus,
a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell comprising zinc and selenium, and
a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell comprising zinc and sulfur,
wherein the quantum dot does not comprise cadmium,
wherein the first semiconductor nanocrystal shell comprises a polyvalent metal dopant comprising indium at an interface with the second semiconductor nanocrystal shell, and
wherein in the quantum dot, a mole ratio of
zinc relative to indium is less than or equal to 30:1,
sulfur relative to selenium is less than or equal to 0.9:1, or
a combination thereof.