US 12,302,764 B2
In-situ formation of a spacer layer for protecting sidewalls of a phase change memory element and methods for forming the same
Tsung-Hsueh Yang, Taichung (TW); Chang-Chih Huang, Hsinchu (TW); and Fu-Ting Sung, Yangmei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Feb. 17, 2022, as Appl. No. 17/673,862.
Prior Publication US 2023/0263079 A1, Aug. 17, 2023
Int. Cl. H10N 70/20 (2023.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01)
CPC H10N 70/231 (2023.02) [H10B 63/34 (2023.02); H10N 70/021 (2023.02); H10N 70/063 (2023.02); H10N 70/841 (2023.02); H10N 70/8825 (2023.02); H10N 70/8828 (2023.02); H10N 70/883 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A phase-change memory device, comprising:
a first electrode formed over an interconnect layer;
a phase-change memory element formed over the first electrode;
a second electrode formed over the phase-change memory element; and
an oxygen-free spacer layer formed over sidewalls of the phase-change memory element, wherein the oxygen-free spacer layer directly contacts the sidewalls of the phase-change memory element.