US 12,302,707 B2
Display apparatus
Chulkyu Kang, Yongin-si (KR); Sangmoo Choi, Yongin-si (KR); Wonkyu Kwak, Yongin-si (KR); Jinwoo Park, Yongin-si (KR); and Dongsun Lee, Yongin-si (KR)
Assigned to SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed by Samsung Display Co., Ltd., Yongin-si (KR)
Filed on Oct. 31, 2023, as Appl. No. 18/498,686.
Application 18/498,686 is a continuation of application No. 16/988,896, filed on Aug. 10, 2020, granted, now 11,832,480.
Application 16/988,896 is a continuation of application No. 16/352,262, filed on Mar. 13, 2019, granted, now 10,741,625, issued on Aug. 11, 2020.
Claims priority of application No. 10-2018-0029280 (KR), filed on Mar. 13, 2018.
Prior Publication US 2024/0065032 A1, Feb. 22, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. G09G 3/32 (2016.01); G09G 3/3233 (2016.01); H10K 59/121 (2023.01); H10K 59/123 (2023.01); H10K 59/124 (2023.01); H10K 59/131 (2023.01); H10K 77/10 (2023.01); H10D 30/67 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10K 102/00 (2023.01)
CPC H10K 59/1213 (2023.02) [G09G 3/3233 (2013.01); H10K 59/1216 (2023.02); H10K 59/123 (2023.02); H10K 59/124 (2023.02); H10K 59/131 (2023.02); H10K 77/111 (2023.02); G09G 2300/0426 (2013.01); G09G 2320/0242 (2013.01); G09G 2330/021 (2013.01); H10D 30/6731 (2025.01); H10D 30/6745 (2025.01); H10D 30/6755 (2025.01); H10D 86/423 (2025.01); H10D 86/441 (2025.01); H10D 86/471 (2025.01); H10D 86/481 (2025.01); H10D 86/60 (2025.01); H10K 2102/311 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A display apparatus, comprising:
a substrate including a first area, a second area, and a bending area between the first area and the second area, the bending area bent; and
a first thin film transistor, a second thin film transistor, and a storage capacitor in the first area, wherein
the first thin film transistor has a silicon semiconductor layer and a first gate electrode insulated from the silicon semiconductor layer by a first insulating layer,
the second thin film transistor has an oxide semiconductor layer on the first insulating layer and a second gate electrode insulated from the oxide semiconductor layer,
the storage capacitor has a lower electrode and a upper electrode,
the first gate electrode overlaps the silicon semiconductor layer and the upper electrode, and
the oxide semiconductor layer and the upper electrode are arranged on a same layer and upper electrode includes an oxide semiconductor material.