| CPC H10K 59/1213 (2023.02) [H10K 59/126 (2023.02); H01L 27/1225 (2013.01); H01L 29/78633 (2013.01); H01L 29/7869 (2013.01)] | 23 Claims |
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1. A transistor, comprising:
a substrate;
an active layer disposed on the substrate and including a first region, a second region, and a channel region between the first region and the second region;
a gate electrode disposed on the active layer, the gate electrode overlapping the channel region;
a first electrode disposed on the substrate, the first electrode being electrically connected to the first region;
a second electrode disposed on the substrate, the second electrode being electrically connected to the second region; and
a first connection electrode disposed on the substrate and electrically connecting the gate electrode and the second electrode,
wherein a resistance of the first connection electrode is greater than a resistance of the gate electrode.
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