US 12,302,684 B2
Imaging element and imaging apparatus
Yosuke Saito, Tokyo (JP); Masashi Bando, Kanagawa (JP); Yukio Kaneda, Kanagawa (JP); Yoshiyuki Hirano, Kanagawa (JP); and Toshiki Moriwaki, Kanagawa (JP)
Assigned to Sony Group Corporation, Tokyo (JP); and Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Filed by SONY GROUP CORPORATION, Tokyo (JP); and SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
Filed on Aug. 23, 2023, as Appl. No. 18/237,075.
Application 18/237,075 is a continuation of application No. 17/262,264, granted, now 11,825,666, previously published as PCT/JP2019/029728, filed on Jul. 30, 2019.
Claims priority of application No. 2018-142497 (JP), filed on Jul. 30, 2018.
Prior Publication US 2024/0023352 A1, Jan. 18, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/146 (2006.01); H10K 19/20 (2023.01); H10K 30/30 (2023.01); H10K 30/82 (2023.01); H10K 39/32 (2023.01)
CPC H10K 39/32 (2023.02) [H10K 19/20 (2023.02); H10K 30/30 (2023.02); H10K 30/82 (2023.02); H01L 27/14647 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A light detecting element, comprising:
a first electrode;
a second electrode;
a photoelectric conversion layer between the first electrode and the second electrode;
a first semiconductor layer provided between the first electrode and the photoelectric conversion layer, and including an n-type semiconductor material; and
a second semiconductor layer provided between the second electrode and the photoelectric conversion layer, wherein the second semiconductor layer includes a carbon-containing compound having an electron affinity larger than a work function of the first electrode, and wherein the first electrode is a cathode and the second electrode is an anode.
 
14. A light detecting apparatus provided with a plurality of pixels each including one or a plurality of light detecting elements, the light detecting elements each comprising:
a first electrode;
a second electrode;
a photoelectric conversion layer between the first electrode and the second electrode;
a first semiconductor layer provided between the first electrode and the photoelectric conversion layer, wherein the first semiconductor layer includes an n-type semiconductor material; and
a second semiconductor layer provided between the second electrode and the photoelectric conversion layer, and including a carbon-containing compound having an electron affinity larger than a work function of the first electrode, and wherein the first electrode is a cathode and the second electrode is an anode.