US 12,302,680 B2
Donor-acceptor interfaces for excitonic semiconductors
Barry P. Rand, Princeton, NJ (US); and Lianfeng Zhao, Jersey City, NJ (US)
Assigned to THE TRUSTEES OF PRINCETON UNIVERSITY, Princeton, NJ (US)
Appl. No. 17/264,037
Filed by The Trustees of Princeton University, Princeton, NJ (US)
PCT Filed Jun. 7, 2019, PCT No. PCT/US2019/035933
§ 371(c)(1), (2) Date Jan. 28, 2021,
PCT Pub. No. WO2020/040844, PCT Pub. Date Feb. 27, 2020.
Claims priority of provisional application 62/719,977, filed on Aug. 20, 2018.
Prior Publication US 2021/0296602 A1, Sep. 23, 2021
Int. Cl. H10K 30/35 (2023.01); H01G 9/20 (2006.01); H10K 30/10 (2023.01); H10K 71/12 (2023.01); H10K 71/16 (2023.01); H10K 71/40 (2023.01); H10K 85/30 (2023.01)
CPC H10K 30/35 (2023.02) [H01G 9/20 (2013.01); H10K 30/10 (2023.02); H10K 85/30 (2023.02); H10K 71/12 (2023.02); H10K 71/164 (2023.02); H10K 71/40 (2023.02)] 17 Claims
OG exemplary drawing
 
1. An organic semiconductor device, comprising:
an anode;
a cathode; and
a donor-acceptor heterojunction disposed between the anode and the cathode,
wherein the donor-acceptor heterojunction comprises:
an acceptor material having a highest occupied molecular orbital (HOMO) and a lowest unoccupied molecular orbital (LUMO); and
a donor material comprising an excitonic low-dimensional hybrid organic-inorganic metal halide perovskite semiconductor.