US 12,302,679 B2
Light emitting diode
Jae Kwon Kim, Ansan-si (KR); Min Chan Heo, Ansan-si (KR); Kyoung Wan Kim, Ansan-si (KR); Jong Kyu Kim, Ansan-si (KR); Hyun A Kim, Ansan-si (KR); and Joon Sup Lee, Ansan-si (KR)
Assigned to SEOUL VIOSYS CO., LTD., Ansan-si (KR)
Filed by SEOUL VIOSYS CO., LTD., Ansan-si (KR)
Filed on May 22, 2024, as Appl. No. 18/671,619.
Application 18/671,619 is a continuation of application No. 17/389,025, filed on Jul. 29, 2021, granted, now 12,015,112.
Application 17/389,025 is a continuation of application No. PCT/KR2019/017219, filed on Dec. 6, 2019.
Claims priority of application No. 10-2019-0012666 (KR), filed on Jan. 31, 2019; and application No. 10-2019-0012988 (KR), filed on Jan. 31, 2019.
Prior Publication US 2024/0313184 A1, Sep. 19, 2024
Int. Cl. H10H 20/857 (2025.01); H10H 20/814 (2025.01); H10H 20/841 (2025.01); H10H 29/14 (2025.01)
CPC H10H 20/857 (2025.01) [H10H 20/814 (2025.01); H10H 20/841 (2025.01); H10H 29/142 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A light emitting module, comprising:
a printed circuit board;
a light emitting device disposed on the printed circuit board and including a light source; and
a diffuser disposed on the light emitting device,
wherein the light source includes:
a first conductivity type semiconductor layer;
a mesa disposed on the first conductivity type semiconductor layer and including an active layer and a second conductivity type semiconductor layer; and
a transparent conductive oxide layer disposed on the mesa and electrically connected to the second conductivity type semiconductor layer;
a metal reflection layer disposed on the mesa and electrically connected to the second conductivity type semiconductor layer; and
a dielectric layer disposed between the second conductivity type semiconductor layer and the metal reflection layer, and
wherein the active layer generates light having a peak wavelength of about 500 nm or less;
wherein the second conductivity type semiconductor layer includes an impurity having a concentration profile including a region that a concentration of the impurity varies along a thickness direction,
wherein the metal reflection layer includes a region spaced apart from a surface of the second conductivity type semiconductor layer by the dielectric layer including a region having a thickness in a range between 200 nm and 1000 nm.