US 12,302,675 B2
Semiconductor light-emitting device
Zhaowu Huang, Fujian (CN); Chang-Chin Yu, Fujian (CN); Li Yang, Fujian (CN); Chenxi Yan, Fujian (CN); Xinglong Li, Fujian (CN); and Yang Li, Fujian (CN)
Assigned to QUANZHOU SANAN SEMICONDUCTOR TECHNOLOGY CO., LTD., Fujian (CN)
Filed by Quanzhou Sanan Semiconductor Technology Co., Ltd., Quanzhou (CN)
Filed on May 13, 2022, as Appl. No. 17/744,351.
Claims priority of application No. 202110537279.7 (CN), filed on May 18, 2021.
Prior Publication US 2022/0376154 A1, Nov. 24, 2022
Int. Cl. H01L 33/62 (2010.01); H10H 20/856 (2025.01); H10H 20/857 (2025.01)
CPC H10H 20/857 (2025.01) [H10H 20/856 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor light-emitting device, comprising:
a lead frame including a main body and a side body extending upwardly from said main body, said main body and said side body cooperatively defining a receiving space, said side body having an inner surface facing said receiving space, and a first height measured from a surface of said main body to a topmost end of said side body;
a light-emitting element disposed on said surface of said main body and in said receiving space; and
a reflection layer covering at least a part of said inner surface, and having a second height measured from said surface of said main body to a topmost end of said reflection layer, said second height being not smaller than 90% of said first height of said side body,
wherein said inner surface has a first portion and a second portion extending between said first portion and said main body, said first portion having a curved shape; and
wherein said first portion and said second portion cooperate to form a stepwise structure, each of said first portion and said second portion having a projection on said surface of said main body, the projection of said first portion being located outside of the projection of said second portion and away from said light-emitting element relative to the projection of said second portion.