US 12,302,666 B2
Semiconductor light emitting device
Yung-Ling Lan, Wuhu (CN); Chan-Chan Ling, Wuhu (CN); Chi-Ming Tsai, Wuhu (CN); and Chia-Hung Chang, Wuhu (CN)
Assigned to XIAMEN SAN'AN OPTOELECTRONICS CO., LTD., Xiamen (CN)
Filed by XIAMEN SAN'AN OPTOELECTRONICS CO., LTD., Xiamen (CN)
Filed on Dec. 15, 2023, as Appl. No. 18/541,090.
Application 18/541,090 is a continuation of application No. 18/096,628, filed on Jan. 13, 2023, granted, now 11,848,401.
Application 18/096,628 is a continuation of application No. 17/209,485, filed on Mar. 23, 2021, granted, now 11,557,693, issued on Jan. 17, 2023.
Application 17/209,485 is a continuation in part of application No. 16/716,598, filed on Dec. 17, 2019, granted, now 10,978,612, issued on Apr. 13, 2021.
Application 16/716,598 is a continuation in part of application No. 16/426,016, filed on May 30, 2019, granted, now 10,535,796, issued on Jan. 14, 2020.
Application 16/426,016 is a continuation in part of application No. PCT/CN2018/078654, filed on Mar. 12, 2018.
Claims priority of application No. 201710638217.9 (CN), filed on Jul. 31, 2017.
Prior Publication US 2024/0113254 A1, Apr. 4, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10H 20/812 (2025.01); H10H 20/816 (2025.01); H10H 20/825 (2025.01)
CPC H10H 20/812 (2025.01) [H10H 20/816 (2025.01); H10H 20/825 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor light emitting device, comprising:
an n-type semiconductor layer, a multi-quantum-well structure, a first capping layer, a second capping layer, an electron barrier layer, a p-type semiconductor layer, and a p-type contact layer stacked in order,
wherein said multi-quantum-well structure includes a plurality of alternately-stacked potential barrier layers and potential well layers;
wherein said electron barrier layer includes a first electron barrier sublayer and a second electron barrier sublayer;
wherein said first capping layer has an aluminum mole fraction larger than that of said second electron barrier sublayer; and
wherein said second electron barrier sublayer has a thickness larger than that of said first electron barrier sublayer, and said first electron barrier sublayer has an aluminum mole fraction larger than that of said second electron barrier sublayer.