US 12,302,648 B2
Backside illuminated single photon avalanche diode
Adarsh Basavalingappa, Penfield, NY (US); Cristian Tivarus, Pittsford, NY (US); Sungin Hwang, Pittsford, NY (US); and Yoshiaki Tashiro, Tokyo (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Filed by Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Filed on Jul. 30, 2021, as Appl. No. 17/390,366.
Prior Publication US 2023/0030282 A1, Feb. 2, 2023
Int. Cl. H01L 27/146 (2006.01); H10F 30/225 (2025.01); H10F 39/00 (2025.01); H10F 39/12 (2025.01)
CPC H10F 30/2255 (2025.01) [H10F 39/199 (2025.01); H10F 39/803 (2025.01); H10F 39/8063 (2025.01); H10F 39/8067 (2025.01); H10F 39/807 (2025.01); H10F 39/811 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A sensor chip comprising:
a resistor; and
a backside illuminated single photon avalanche diode (SPAD) having a first light incident side and a second side opposite to the first light incident side, the backside illuminated SPAD connected to the resistor and including
an anode disposed on the second side;
a cathode disposed on the second side; and
a multiplication structure.