US 12,302,645 B2
Method for manufacturing semiconductor device
Toshinari Sasaki, Atsugi (JP); Junichiro Sakata, Atsugi (JP); Hiroki Ohara, Sagamihara (JP); and Shunpei Yamazaki, Setagaya (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Jun. 27, 2023, as Appl. No. 18/214,623.
Application 18/214,623 is a continuation of application No. 17/883,882, filed on Aug. 9, 2022, abandoned.
Application 17/883,882 is a continuation of application No. 17/026,486, filed on Sep. 21, 2020, granted, now 11,417,754, issued on Aug. 16, 2022.
Application 17/026,486 is a continuation of application No. 16/385,396, filed on Apr. 16, 2019, granted, now 10,790,383, issued on Sep. 29, 2020.
Application 16/385,396 is a continuation of application No. 15/953,795, filed on Apr. 16, 2018, granted, now 10,418,467, issued on Sep. 17, 2019.
Application 15/953,795 is a continuation of application No. 15/193,827, filed on Jun. 27, 2016, granted, now 9,985,118, issued on May 29, 2018.
Application 15/193,827 is a continuation of application No. 15/057,445, filed on Mar. 1, 2016, granted, now 9,412,768, issued on Aug. 9, 2016.
Application 15/057,445 is a continuation of application No. 14/867,636, filed on Sep. 28, 2015, granted, now 9,299,807, issued on Mar. 29, 2016.
Application 14/867,636 is a continuation of application No. 14/247,665, filed on Apr. 8, 2014, granted, now 9,293,566, issued on Mar. 22, 2016.
Application 14/247,665 is a continuation of application No. 13/967,605, filed on Aug. 15, 2013, granted, now 8,697,488, issued on Apr. 15, 2014.
Application 13/967,605 is a continuation of application No. 13/767,335, filed on Feb. 14, 2013, granted, now 8,513,054, issued on Aug. 20, 2013.
Application 13/767,335 is a continuation of application No. 13/495,481, filed on Jun. 13, 2012, granted, now 8,394,671, issued on Mar. 12, 2013.
Application 13/495,481 is a continuation of application No. 12/826,015, filed on Jun. 29, 2010, granted, now 8,216,878, issued on Jul. 10, 2012.
Claims priority of application No. 2009-156414 (JP), filed on Jun. 30, 2009.
Prior Publication US 2023/0387276 A1, Nov. 30, 2023
Int. Cl. H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 29/24 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/66969 (2013.01) [H01L 27/1225 (2013.01); H01L 27/124 (2013.01); H01L 29/24 (2013.01); H01L 29/42356 (2013.01); H01L 29/42384 (2013.01); H01L 29/66742 (2013.01); H01L 29/78606 (2013.01); H01L 29/78618 (2013.01); H01L 29/7869 (2013.01); H01L 29/78696 (2013.01)] 3 Claims
OG exemplary drawing
 
1. A display device comprising:
a transistor, a pixel electrode layer, and a terminal portion,
wherein the transistor comprises:
a first conductive layer over a substrate;
a first insulating layer over the first conductive layer;
a first oxide semiconductor layer over the first insulating layer;
a second oxide semiconductor layer over the first oxide semiconductor layer; and
a second conductive layer and a third conductive layer electrically connected to the second oxide semiconductor layer,
wherein the display device further comprises:
a second insulating layer over the second conductive layer and the third conductive layer;
a third insulating layer over the second insulating layer; and
a fourth conductive layer over the third insulating layer, the fourth conductive layer comprising the same material as the pixel electrode layer,
wherein the fourth conductive layer has a region overlapping with the first conductive layer and a region overlapping with the first oxide semiconductor layer and the second oxide semiconductor layer,
wherein the pixel electrode layer has a region electrically connected to one of the second conductive layer and the third conductive layer,
wherein the terminal portion comprises:
a fifth conductive layer comprising the same material as the first conductive layer;
the first insulating layer over the fifth conductive layer;
a sixth conductive layer over the first insulating layer, the sixth conductive layer comprising the same material as the second conductive layer and the third conductive layer; and
a seventh conductive layer over the second insulating layer, the seventh conductive layer comprising the same material as the pixel electrode layer, and
wherein the seventh conductive layer has a region electrically connected to the fifth conductive layer and the sixth conductive layer.