US 12,302,643 B2
Backend electrostatic discharge diode apparatus and method of fabricating the same
Prashant Majhi, San Jose, CA (US); Ilya Karpov, Portland, OR (US); Brian Doyle, Portland, OR (US); Ravi Pillarisetty, Portland, OR (US); and Abhishek Sharma, Hillsboro, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Jan. 10, 2022, as Appl. No. 17/572,437.
Application 17/572,437 is a continuation of application No. 15/940,899, filed on Mar. 29, 2018, granted, now 11,222,885.
Prior Publication US 2022/0130820 A1, Apr. 28, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H10D 89/60 (2025.01); H10D 8/00 (2025.01)
CPC H10D 89/611 (2025.01) [H10D 8/422 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit (IC) comprising:
a transistor within a frontend region of the IC; and
a diode within a backend region of the IC, wherein the diode is within a circuit coupled to the transistor, and wherein the diode comprises:
a first terminal comprising a metal;
a second terminal comprising a metal; and
an insulator or semiconductor material structure between the first and second terminals.