US 12,302,639 B2
Metal oxide film and method for forming metal oxide film
Masahiro Takahashi, Kanagawa (JP); Takuya Hirohashi, Kanagawa (JP); Masashi Tsubuku, Kanagawa (JP); Noritaka Ishihara, Kanagawa (JP); and Masashi Oota, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
Filed on Mar. 26, 2024, as Appl. No. 18/616,481.
Application 18/616,481 is a continuation of application No. 18/137,032, filed on Apr. 20, 2023, granted, now 11,978,742.
Application 18/137,032 is a continuation of application No. 17/144,550, filed on Jan. 8, 2021, granted, now 11,652,110, issued on May 16, 2023.
Application 17/144,550 is a continuation of application No. 16/024,997, filed on Jul. 2, 2018, granted, now 10,892,282, issued on Jan. 12, 2021.
Application 16/024,997 is a continuation of application No. 15/879,506, filed on Jan. 25, 2018, granted, now 10,461,099, issued on Oct. 29, 2019.
Application 15/879,506 is a continuation of application No. 14/071,932, filed on Nov. 5, 2013, granted, now 9,881,939, issued on Jan. 30, 2018.
Claims priority of application No. 2012-245992 (JP), filed on Nov. 8, 2012; application No. 2013-016242 (JP), filed on Jan. 30, 2013; and application No. 2013-056768 (JP), filed on Mar. 19, 2013.
Prior Publication US 2024/0321897 A1, Sep. 26, 2024
Int. Cl. H01L 27/12 (2006.01); C23C 14/08 (2006.01); G01N 23/207 (2018.01); G02F 1/1368 (2006.01); H01L 21/66 (2006.01); H10D 30/67 (2025.01); H10D 62/40 (2025.01); H10D 62/80 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01); H10D 99/00 (2025.01); H01L 21/02 (2006.01)
CPC H10D 86/60 (2025.01) [C23C 14/086 (2013.01); G01N 23/207 (2013.01); G02F 1/1368 (2013.01); H01L 22/12 (2013.01); H10D 30/6755 (2025.01); H10D 30/6756 (2025.01); H10D 62/40 (2025.01); H10D 62/80 (2025.01); H10D 86/423 (2025.01); H10D 99/00 (2025.01); H01L 21/0237 (2013.01); H01L 21/02422 (2013.01); H01L 21/02554 (2013.01); H01L 21/02565 (2013.01); H01L 21/02631 (2013.01); H01L 2924/0002 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A display device comprising:
a first transistor, a second transistor, a light-emitting element, and a capacitor,
wherein one of a source electrode and a drain electrode of the first transistor is electrically connected to a gate electrode of the second transistor and one electrode of the capacitor,
wherein another electrode of the capacitor is electrically connected to a power supply line,
wherein a potential of the power supply line is supplied to the light-emitting element at least through a channel of the second transistor,
wherein at least one of the first transistor and the second transistor comprises a gate electrode, an oxide semiconductor layer, and a gate insulating film between the gate electrode and the oxide semiconductor layer,
wherein a plurality of circumferentially distributed spots are observable in a nanobeam electron diffraction pattern of the oxide semiconductor layer,
wherein the plurality of circumferentially distributed spots do not have regularity that represents crystal parts aligned with a specific plane,
wherein the oxide semiconductor layer comprises a region in contact with a top surface of an insulating film,
wherein the insulating film comprises silicon oxide, and
wherein the gate insulating film comprises silicon oxide.