US 12,302,631 B2
Semiconductor device and method for forming the same
Kun-Yu Lee, Tainan (TW); Chun-Yao Wang, Hsinchu County (TW); and Chi On Chui, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Feb. 1, 2024, as Appl. No. 18/429,734.
Application 18/429,734 is a division of application No. 17/395,827, filed on Aug. 6, 2021, granted, now 11,923,360.
Prior Publication US 2024/0170485 A1, May 23, 2024
Int. Cl. H01L 27/088 (2006.01); H01L 21/02 (2006.01); H01L 21/8234 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 62/10 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01)
CPC H10D 84/834 (2025.01) [H01L 21/02164 (2013.01); H10D 30/0243 (2025.01); H10D 30/6211 (2025.01); H10D 62/115 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a pair of semiconductor fins extending upwardly from the substrate;
a dummy fin structure extending upwardly above the substrate and laterally between the pair of semiconductor fins;
a shallow trench isolation (STI) structure laterally surrounding lower portions of the pair of semiconductor fins and the dummy fin structure;
a gate structure extending across the pair of semiconductor fins and the dummy fin structure;
a plurality of source/drain structures above the pair of semiconductor fins and on either side of the gate structure;
a crystalline hard mask layer extending upwardly from the dummy fin structure and having a U-shaped cross section; and
an amorphous hard mask layer in the crystalline hard mask layer, wherein the amorphous hard mask layer having a U-shaped cross section conformal to the U-shaped cross section of the crystalline hard mask layer.