US 12,302,628 B2
Integrated chip with solid-state power storage device
Yi Ching Ong, Hsinchu (TW); Kuen-Yi Chen, Hsinchu (TW); Yi-Hsuan Chen, Taoyuan (TW); Kuo-Ching Huang, Hsinchu (TW); and Harry-Hak-Lay Chuang, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jan. 7, 2022, as Appl. No. 17/570,685.
Claims priority of provisional application 63/214,290, filed on Jun. 24, 2021.
Prior Publication US 2022/0415883 A1, Dec. 29, 2022
Int. Cl. H01L 23/495 (2006.01); H01L 23/538 (2006.01); H01M 10/05 (2010.01); H01M 50/11 (2021.01); H10D 84/40 (2025.01)
CPC H10D 84/40 (2025.01) [H01L 23/49593 (2013.01); H01L 23/5385 (2013.01); H01L 23/5386 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for forming an integrated chip, the method comprising:
depositing a first metal layer over a transistor device that is arranged along a substrate;
exposing the first metal layer to air to form a metal oxide layer along a top surface of the first metal layer;
exposing the metal oxide layer to water to form a hydrous metal oxide layer along a top surface of the metal oxide layer;
depositing an ionic crystal layer over the hydrous metal oxide layer; and
depositing a second metal layer over the ionic crystal layer.
 
11. A method for forming an integrated chip, the method comprising:
depositing a first dielectric layer over a transistor device that is arranged along a semiconductor substrate;
depositing a first metal layer comprising a first metal over the first dielectric layer;
providing oxygen to a top surface of the first metal layer to form a metal oxide layer comprising the first metal along the top surface of the first metal layer;
providing water to a top surface of the metal oxide layer to form a hydrous metal oxide layer comprising the first metal along the top surface of the metal oxide layer;
depositing an ionic crystal layer comprising a second metal, different than the first metal, over the hydrous metal oxide layer; and
depositing a second metal layer over the ionic crystal layer.
 
15. A method for forming an integrated chip, the method comprising:
depositing a first metal layer over a transistor device that is arranged along a substrate;
exposing the first metal layer to air to form a metal oxide layer along a top surface of the first metal layer;
exposing the metal oxide layer to water to form a hydrous metal oxide layer along a top surface of the metal oxide layer;
depositing a dielectric layer on a top surface of the hydrous metal oxide layer;
depositing an ionic crystal layer over the hydrous metal oxide layer and on a top surface of the dielectric layer; and
depositing a second metal layer over the ionic crystal layer.