US 12,302,619 B2
Silicon carbide components and methods for producing silicon carbide components
Roland Rupp, Lauf (DE); and Ronny Kern, Villach (AT)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Jun. 12, 2023, as Appl. No. 18/208,406.
Application 18/208,406 is a continuation of application No. 17/350,586, filed on Jun. 17, 2021, granted, now 11,715,768.
Application 17/350,586 is a continuation of application No. 16/111,810, filed on Aug. 24, 2018, granted, now 11,069,778, issued on Jul. 20, 2021.
Claims priority of application No. 102017119568.8 (DE), filed on Aug. 25, 2017.
Prior Publication US 2023/0334337 A1, Oct. 19, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/16 (2006.01); G06N 3/126 (2023.01); H01L 21/02 (2006.01); H01L 21/04 (2006.01); H01L 21/265 (2006.01); H01L 21/268 (2006.01); H01L 21/304 (2006.01); H01L 21/78 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 29/872 (2006.01); H10D 8/01 (2025.01); H10D 12/01 (2025.01); H10D 62/10 (2025.01); H10D 62/832 (2025.01); H10D 8/60 (2025.01); H10D 12/00 (2025.01); H10D 30/63 (2025.01)
CPC H10D 62/8325 (2025.01) [G06N 3/126 (2013.01); H01L 21/02378 (2013.01); H01L 21/02529 (2013.01); H01L 21/02694 (2013.01); H01L 21/046 (2013.01); H01L 21/268 (2013.01); H01L 21/304 (2013.01); H01L 21/7813 (2013.01); H10D 8/051 (2025.01); H10D 12/031 (2025.01); H10D 62/105 (2025.01); H01L 21/26506 (2013.01); H10D 8/60 (2025.01); H10D 12/441 (2025.01); H10D 30/63 (2025.01)] 16 Claims
OG exemplary drawing
 
1. A method for producing a silicon carbide component, the method comprising:
forming a silicon carbide layer on an initial wafer, wherein the silicon carbide layer comprises a doping region of the silicon carbide component to be produced in the silicon carbide layer;
forming an electrically conductive contact structure on the surface of the silicon carbide layer, the electrically conductive contact structure electrically contacting the doping region,
producing a splitting region by pre-damaging the splitting region, wherein the splitting region is produced by laser treating the splitting region before forming the electrically conductive contact structure in order to pre-damage the splitting region;
splitting the silicon carbide layer or the initial wafer along the splitting region after forming the silicon carbide layer, such that a silicon carbide substrate at least of the silicon carbide component to be produced is split off, wherein the silicon carbide substrate has a thickness of more than 30 μm,
wherein the doping region extends to a surface of the silicon carbide layer before splitting the silicon carbide layer, and
wherein splitting along the splitting region comprises applying a polymer film.