US 12,302,617 B2
Semiconductor device and manufacturing method of semiconductor device
Yasunori Agata, Matsumoto (JP)
Assigned to FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed by FUJI ELECTRIC CO., LTD., Kanagawa (JP)
Filed on Feb. 8, 2024, as Appl. No. 18/437,199.
Application 18/437,199 is a continuation of application No. 17/486,968, filed on Sep. 28, 2021, granted, now 11,901,419.
Application 17/486,968 is a continuation of application No. PCT/JP2020/034016, filed on Sep. 8, 2020.
Claims priority of application No. 2019-187787 (JP), filed on Oct. 11, 2019.
Prior Publication US 2024/0186383 A1, Jun. 6, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10D 62/60 (2025.01); H01L 21/263 (2006.01); H01L 21/265 (2006.01); H10D 8/00 (2025.01); H10D 12/00 (2025.01)
CPC H10D 62/60 (2025.01) [H01L 21/2636 (2013.01); H01L 21/26506 (2013.01); H10D 8/00 (2025.01); H10D 12/481 (2025.01)] 17 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor substrate that has an upper surface and a lower surface and includes a bulk donor,
wherein a hydrogen chemical concentration distribution of the semiconductor substrate in a depth direction has a first hydrogen concentration peak and a second hydrogen concentration peak disposed between the lower surface of the semiconductor substrate and the first hydrogen concentration peak, and
wherein an intermediate donor concentration in an intermediate region between the first hydrogen concentration peak and the second hydrogen concentration peak is lower than any of an upper surface side donor concentration between the first hydrogen concentration peak and the upper surface of the semiconductor substrate and a lower surface side donor concentration between the second hydrogen concentration peak and the lower surface of the semiconductor substrate.