US 12,302,616 B2
Semiconductor device and semiconductor module
Naoto Kaguchi, Tokyo (JP)
Assigned to Mitsubishi Electric Corporation, Tokyo (JP)
Appl. No. 17/756,019
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Dec. 23, 2019, PCT No. PCT/JP2019/050304
§ 371(c)(1), (2) Date May 13, 2022,
PCT Pub. No. WO2021/130809, PCT Pub. Date Jul. 1, 2021.
Prior Publication US 2022/0406893 A1, Dec. 22, 2022
Int. Cl. H01L 21/71 (2006.01); H10D 62/17 (2025.01); H10D 62/832 (2025.01)
CPC H10D 62/393 (2025.01) [H10D 62/8325 (2025.01)] 11 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a semiconductor substrate including a semiconductor element on a front surface thereof and a back surface electrode on a back surface thereof that controls operation of the semiconductor element;
a first electrode and a second electrode provided in a terminal region being the terminal region formed on an outer peripheral portion of the semiconductor substrate and being the terminal region outside an active region in which the semiconductor element is formed;
an insulating film provided between the first electrode and the second electrode; and
an electrical connection external to the semiconductor substrate that electrically connects the first electrode to the back surface electrode, wherein
the second electrode is provided on an insulating interlayer film provided on the front surface of the semiconductor substrate, and
the first electrode is in contact with the front surface of the semiconductor substrate and is provided on the semiconductor substrate closer to an end portion thereof than the second electrode is.