US 12,302,606 B2
Semiconductor devices with crystallized channel regions and methods of manufacturing thereof
Mark I. Gardner, Albany, NY (US); and H. Jim Fulford, Albany, NY (US)
Assigned to Tokyo Electron Limited, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Feb. 14, 2022, as Appl. No. 17/671,341.
Prior Publication US 2023/0261075 A1, Aug. 17, 2023
Int. Cl. H10D 30/67 (2025.01); H10D 30/01 (2025.01); H10D 84/85 (2025.01)
CPC H10D 30/6735 (2025.01) [H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6757 (2025.01); H10D 84/85 (2025.01)] 12 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a first metal contact;
a second metal contact;
a seed layer extending from the first metal contact to the second metal contact;
a first terminal layer coupled between a first end of the seed layer and the first metal contact;
a second terminal layer coupled between a second end of the seed layer and the second metal contact;
a re-crystallized two-dimensional (2D) material wrapping around the seed layer, a portion of the first terminal layer, and a portion of the second terminal layer; and
a gate structure wrapping around the re-crystallized 2D material.